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  1. ; ; ; ; ; (, IEEE Transactions on Electron Devices)
    Free, publicly-accessible full text available April 1, 2026
  2. ; ; ; ; ; ; ; ; ; ; et al (, IEEE Electron Device Letters)
    Free, publicly-accessible full text available June 1, 2026
  3. ; ; ; ; (, Applied Physics Express)
    Abstract This letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates. Compared with AlN MESFETs on foreign substrates, the AlN-on-AlN MESFETs showed high breakdown voltages of over 2 kV for drain-to-gate spacing of 15 μm and one of the highest average breakdown fields among reported AlN MESFETs. Additionally, the devices also exhibited decent drain saturation current and on/off ratio without complicated regrown or graded contact layers, which are several times higher than those of reported AlN-on-sapphire MESEFTs. This work is beneficial for the future development of ultrawide bandgap AlN power electronics. 
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  4. ; ; ; ; ; ; ; ; (, Applied Physics Letters)
    We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices. 
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  5. ; ; ; ; (, Applied Physics Express)
    Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalizedBVby the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higherη(>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices. 
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  6. ; ; ; ; (, IEEE Transactions on Electron Devices)
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  7. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Letters)
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